SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

To enhance the manufacturing efficiency of a semiconductor device.SOLUTION: A semiconductor substrate includes a base substrate; a template substrate having a first seed area and first selection growth area arranged in a first direction and having a first convex body in the first selection growth ar...

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Bibliographische Detailangaben
Hauptverfasser:	TADA TATSUO, TAKEUCHI KAZUMA, MASAKI KATSUAKI, MISHIMA KOSUKE, KAMIKAWA TAKESHI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	To enhance the manufacturing efficiency of a semiconductor device.SOLUTION: A semiconductor substrate includes a base substrate; a template substrate having a first seed area and first selection growth area arranged in a first direction and having a first convex body in the first selection growth area; and a first nitride semiconductor part positioned on the first seed area and the first selection growth area, having a longitudinal shape extended in a second direction orthogonal to the first direction and including a constriction part contacting the outer peripheral surface of the first convex body.SELECTED DRAWING: Figure 1 【課題】半導体デバイスの製造効率を高める。【解決手段】半導体基板は、ベース基板を含み、第１方向に並ぶ第１シード領域および第１選択成長領域を有し、前記第１選択成長領域に第１凸体が設けられているテンプレート基板と、前記第１シード領域上および前記第１選択成長領域上に位置し、前記第１方向と直交する第２方向に伸びる長手形状を有し、前記第１凸体の外周面に接する括れ部を有する第１窒化物半導体部と、を備える。【選択図】図１