SEMICONDUCTOR DEVICE

To provide a semiconductor device capable of suitably forming a wiring layer on a memory cell array and a via plug.SOLUTION: According to one embodiment, a semiconductor device comprises a substrate, a first laminated film provided above the substrate, including a plurality of electrode layers and a plurality of first insulation films alternately laminated in a first direction, and included in a memory cell array, and a second laminated film provided above the substrate and including one or more first insulation films among the plurality of first insulation films and one or more first films alternately laminated with the one or more first insulation films in the first direction. The semiconductor device further includes a first plug provided in the second laminated film, and a first wiring layer provided on the memory cell array and the first plug and electrically connected to the memory cell array and the first plug.SELECTED DRAWING: Figure 5 【課題】メモリセルアレイおよびビアプラグ上に配線層を好適に形成することが可能な半導体装置を提供する。【解決手段】一の実施形態によれば、半導体装置は、基板と、前記基板の上方に設けられ、第１方向に交互に積層された複数の電極層と複数の第１絶縁膜とを含み、メモリセルアレイに含まれる第１積層膜と、前記基板の上方に設けられ、前記複数の第１絶縁膜のうちの１つ以上の第１絶縁膜と、前記１つ以上の第１絶縁膜と前記第１方向に交互に積層された１つ以上の第１膜とを含む第２積層膜とを備える。前記装置はさらに、前記第２積層膜内に設けられた第１プラグと、前記メモリセルアレイおよび前記第１プラグ上に設けられ、前記メモリセルアレイおよび前記第１プラグに電気的に接続された第１配線層とを備える。【選択図】図５