DUAL-LAYER CMP POLISHING SUBPAD

To provide a porous subpad for a chemical mechanical polishing pad comprising a polishing layer having: a polymeric matrix; a polishing surface useful for polishing at least one of semiconductor, magnetic and optical substrates; and a bottom surface.SOLUTION: The porous subpad includes a non-porous...

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Bibliographische Detailangaben
Hauptverfasser:	HOU GUANHUA, WANG TECHUN, NESTOR A VASQUEZ, ANDREW WANK, JOHN R MCCORMICK
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	To provide a porous subpad for a chemical mechanical polishing pad comprising a polishing layer having: a polymeric matrix; a polishing surface useful for polishing at least one of semiconductor, magnetic and optical substrates; and a bottom surface.SOLUTION: The porous subpad includes a non-porous layer having a polymeric matrix and a multilayer having a micro-scale negative impression of the bottom surface of the polishing pad. The multilayer is closed cell micropores, open cell micropores or a mixture of closed and open cell micropores that are gas-filled. The multilayer remains gas-filled during an entire polishing life of the polishing pad.SELECTED DRAWING: None 【課題】本発明は、ポリマーマトリックスと、半導体、磁性及び光学基材の少なくとも一つを研磨するのに有用な研磨面と、底面とを有する研磨層を含むケミカルメカニカル研磨パッドのための多孔性サブパッドを提供する。【解決手段】多孔性サブパッドは、ポリマーマトリックスを有する非多孔性層と、研磨パッドの底面のマイクロスケールの凹型圧痕を有する多層とを含む。多層は、ガス充填されている独立気泡マイクロ孔、連続気泡マイクロ孔又は独立気泡マイクロ孔と連続気泡マイクロ孔との混合物であり、多層は、研磨パッドの全研磨寿命中、ガス充填状態に留まる。【選択図】なし