SILICON CARBIDE INTEGRATED DEVICE AND METHOD FOR MANUFACTURING INTEGRATED DEVICE

To optimize an edge terminal structure.SOLUTION: An integrated device includes: a semiconductor structure layer which contains silicon carbide and which has a first conductivity type; a power device which is integrated in the structure layer; and an edge terminal structure which is extended in a rin...

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Bibliographische Detailangaben

1. Verfasser:	LEONARDO FRAGAPANE
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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