EPITAXIAL GROWTH APPARATUS AND GAS SUPPLY CONTROL MODULE USED THEREFOR

To provide an epitaxial growth apparatus, and a gas supply control module used therefor.SOLUTION: An epitaxial growth apparatus includes: a reaction chamber; a susceptor positioned in the reaction chamber and stably placing a wafer; and a gas supply control module for controlling the flow of gas flo...

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Hauptverfasser:	KWON HYUN HO, CHOI BUM HO, LEE SEUNG SU, PARK KYUNG SHIN, LIM SUK HO, JEONG JONG WOOK, KIM DONG HYEON
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	To provide an epitaxial growth apparatus, and a gas supply control module used therefor.SOLUTION: An epitaxial growth apparatus includes: a reaction chamber; a susceptor positioned in the reaction chamber and stably placing a wafer; and a gas supply control module for controlling the flow of gas flowing into the reaction chamber. The gas supply control module includes: an injector (210) including a center port (211) corresponding to the central area of the wafer, a pair of edge ports (213) corresponding to edge areas on both sides of the wafer and a pair of middle ports (215) arranged between the center port (211) and the pair of edge ports (213), respectively; and a flow rate distribution unit (230) constituted so as to independently distribute the flow rate of gas inputted from a source module to the ports (211, 213 and 215).SELECTED DRAWING: Figure 3 【課題】エピタキシャル成長装置及びそれに使用されるガス供給調節モジュールを提供する。【解決手段】エピタキシャル成長装置は反応チャンバ；前記反応チャンバに位置し、ウエハが安着するサセプタ；及び前記反応チャンバ内に流入されるガスの流動を調節するガス供給調節モジュールを含み、前記ガス供給調節モジュールは、前記ウエハの中央領域に対応するセンターポート(211)と、前記ウエハの両側の縁部領域に対応する一対のエッジポート(213)と、前記センターポート(211)と前記一対のエッジポート(213)の間にそれぞれ配置される一対のミドルポート(215)とを備えるインジェクタ(210)；及びソースモジュールから入力されたガスの流量を前記ポート(211,213,215)に対して独立的に配分するように構成される流量配分ユニット(230)を含む。【選択図】図３