DISPLAY DEVICE
To improve luminance of a display device.SOLUTION: A display device comprises: a first nitride insulating film provided on a first substrate; a gate electrode provided on the first nitride insulating film; a second nitride insulating film provided on the gate electrode; a first oxide insulating film...
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creator | HANADA AKIHIRO ONODERA RYO KAITO TAKUO TANAKA YOSHINORI ITO TOMOYUKI |
description | To improve luminance of a display device.SOLUTION: A display device comprises: a first nitride insulating film provided on a first substrate; a gate electrode provided on the first nitride insulating film; a second nitride insulating film provided on the gate electrode; a first oxide insulating film provided on the second nitride insulating film; and an oxide semiconductor layer provided on the first oxide insulating film. The gate electrode is formed by successively laminating a first titanium layer, an aluminum layer and a second titanium layer in this order from a first nitride insulating film side, and the thickness of the second titanium layer is larger than thickness of the first titanium layer.SELECTED DRAWING: Figure 4
【課題】表示装置の輝度を向上させる。【解決手段】表示装置は、第1基板の上に設けられた第1窒化絶縁膜と、第1窒化絶縁膜の上に設けられたゲート電極と、ゲート電極の上に設けられた第2窒化絶縁膜と、第2窒化絶縁膜の上に設けられた第1酸化絶縁膜と、第1酸化絶縁膜の上に設けられた酸化物半導体層と、を含み、ゲート電極は、第1チタン層、アルミニウム層、及び第2チタン層が第1窒化絶縁膜側から順に積層されており、第2チタン層の膜厚は、第1チタン層の膜厚より大きい。【選択図】図4 |
format | Patent |
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【課題】表示装置の輝度を向上させる。【解決手段】表示装置は、第1基板の上に設けられた第1窒化絶縁膜と、第1窒化絶縁膜の上に設けられたゲート電極と、ゲート電極の上に設けられた第2窒化絶縁膜と、第2窒化絶縁膜の上に設けられた第1酸化絶縁膜と、第1酸化絶縁膜の上に設けられた酸化物半導体層と、を含み、ゲート電極は、第1チタン層、アルミニウム層、及び第2チタン層が第1窒化絶縁膜側から順に積層されており、第2チタン層の膜厚は、第1チタン層の膜厚より大きい。【選択図】図4</description><language>eng ; jpn</language><subject>ADVERTISING ; CRYPTOGRAPHY ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; DISPLAY ; DISPLAYING ; EDUCATION ; FREQUENCY-CHANGING ; LABELS OR NAME-PLATES ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; SEALS ; SIGNS ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240529&DB=EPODOC&CC=JP&NR=2024073192A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240529&DB=EPODOC&CC=JP&NR=2024073192A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HANADA AKIHIRO</creatorcontrib><creatorcontrib>ONODERA RYO</creatorcontrib><creatorcontrib>KAITO TAKUO</creatorcontrib><creatorcontrib>TANAKA YOSHINORI</creatorcontrib><creatorcontrib>ITO TOMOYUKI</creatorcontrib><title>DISPLAY DEVICE</title><description>To improve luminance of a display device.SOLUTION: A display device comprises: a first nitride insulating film provided on a first substrate; a gate electrode provided on the first nitride insulating film; a second nitride insulating film provided on the gate electrode; a first oxide insulating film provided on the second nitride insulating film; and an oxide semiconductor layer provided on the first oxide insulating film. The gate electrode is formed by successively laminating a first titanium layer, an aluminum layer and a second titanium layer in this order from a first nitride insulating film side, and the thickness of the second titanium layer is larger than thickness of the first titanium layer.SELECTED DRAWING: Figure 4
【課題】表示装置の輝度を向上させる。【解決手段】表示装置は、第1基板の上に設けられた第1窒化絶縁膜と、第1窒化絶縁膜の上に設けられたゲート電極と、ゲート電極の上に設けられた第2窒化絶縁膜と、第2窒化絶縁膜の上に設けられた第1酸化絶縁膜と、第1酸化絶縁膜の上に設けられた酸化物半導体層と、を含み、ゲート電極は、第1チタン層、アルミニウム層、及び第2チタン層が第1窒化絶縁膜側から順に積層されており、第2チタン層の膜厚は、第1チタン層の膜厚より大きい。【選択図】図4</description><subject>ADVERTISING</subject><subject>CRYPTOGRAPHY</subject><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>DISPLAY</subject><subject>DISPLAYING</subject><subject>EDUCATION</subject><subject>FREQUENCY-CHANGING</subject><subject>LABELS OR NAME-PLATES</subject><subject>NON-LINEAR OPTICS</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>SEALS</subject><subject>SIGNS</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOBz8QwO8HGMVHBxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRiYG5saGlkaOxkQpAgD6HB1L</recordid><startdate>20240529</startdate><enddate>20240529</enddate><creator>HANADA AKIHIRO</creator><creator>ONODERA RYO</creator><creator>KAITO TAKUO</creator><creator>TANAKA YOSHINORI</creator><creator>ITO TOMOYUKI</creator><scope>EVB</scope></search><sort><creationdate>20240529</creationdate><title>DISPLAY DEVICE</title><author>HANADA AKIHIRO ; ONODERA RYO ; KAITO TAKUO ; TANAKA YOSHINORI ; ITO TOMOYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2024073192A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2024</creationdate><topic>ADVERTISING</topic><topic>CRYPTOGRAPHY</topic><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>DISPLAY</topic><topic>DISPLAYING</topic><topic>EDUCATION</topic><topic>FREQUENCY-CHANGING</topic><topic>LABELS OR NAME-PLATES</topic><topic>NON-LINEAR OPTICS</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>SEALS</topic><topic>SIGNS</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><toplevel>online_resources</toplevel><creatorcontrib>HANADA AKIHIRO</creatorcontrib><creatorcontrib>ONODERA RYO</creatorcontrib><creatorcontrib>KAITO TAKUO</creatorcontrib><creatorcontrib>TANAKA YOSHINORI</creatorcontrib><creatorcontrib>ITO TOMOYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HANADA AKIHIRO</au><au>ONODERA RYO</au><au>KAITO TAKUO</au><au>TANAKA YOSHINORI</au><au>ITO TOMOYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DISPLAY DEVICE</title><date>2024-05-29</date><risdate>2024</risdate><abstract>To improve luminance of a display device.SOLUTION: A display device comprises: a first nitride insulating film provided on a first substrate; a gate electrode provided on the first nitride insulating film; a second nitride insulating film provided on the gate electrode; a first oxide insulating film provided on the second nitride insulating film; and an oxide semiconductor layer provided on the first oxide insulating film. The gate electrode is formed by successively laminating a first titanium layer, an aluminum layer and a second titanium layer in this order from a first nitride insulating film side, and the thickness of the second titanium layer is larger than thickness of the first titanium layer.SELECTED DRAWING: Figure 4
【課題】表示装置の輝度を向上させる。【解決手段】表示装置は、第1基板の上に設けられた第1窒化絶縁膜と、第1窒化絶縁膜の上に設けられたゲート電極と、ゲート電極の上に設けられた第2窒化絶縁膜と、第2窒化絶縁膜の上に設けられた第1酸化絶縁膜と、第1酸化絶縁膜の上に設けられた酸化物半導体層と、を含み、ゲート電極は、第1チタン層、アルミニウム層、及び第2チタン層が第1窒化絶縁膜側から順に積層されており、第2チタン層の膜厚は、第1チタン層の膜厚より大きい。【選択図】図4</abstract><oa>free_for_read</oa></addata></record> |
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subjects | ADVERTISING CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
title | DISPLAY DEVICE |
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