POWER CONVERSION DEVICE
To provide a technique for a power conversion device in which a plurality of switch legs formed of semiconductor switches corresponding to upper and lower arms are connected in parallel, for suppressing unbalanced current flowing in each semiconductor switch.SOLUTION: A power conversion device 1 acc...
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Sprache: | eng ; jpn |
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Zusammenfassung: | To provide a technique for a power conversion device in which a plurality of switch legs formed of semiconductor switches corresponding to upper and lower arms are connected in parallel, for suppressing unbalanced current flowing in each semiconductor switch.SOLUTION: A power conversion device 1 according to one embodiment of the present disclosure includes a U-phase positive electrode side DC bus bar 41P, a U-phase negative electrode side DC bus bar 41N, and a U-phase parallel connection bus bar 41O1 that respectively connect between positive electrode side terminals 410P of a plurality of switch modules 410, between negative electrode side terminals 410N thereof, and between AC output terminals 410O thereof. These bus bars constitute a U-phase laminate bus bar 41PNO with a laminate structure in which layers are stacked through an insulating layer 41I1. In the U-phase parallel connection bus bar 41O1, the lengths of the routes between all the arms included in the switch modules 410 and a merge part where all the routes from the respective switch modules 410 merge are substantially equal.SELECTED DRAWING: Figure 2
【課題】上下のアームに相当する半導体スイッチで構成されるスイッチレグを複数並列接続する電力変換装置において、各半導体スイッチに流れる電流のアンバランスを抑制することが可能な技術を提供する。【解決手段】本開示の一実施形態に係る電力変換装置1は、複数のスイッチモジュール410の正極側端子410P同士、負極側端子410N同士、及び交流出力端子410O同士のそれぞれを接続するU相正極側直流ブスバー41P、U相負極側直流ブスバー41N、及びU相並列接続用ブスバー41O1を含み、これらのブスバーは、絶縁層41I1を介して積層されるラミネート構造のU相ラミネートブスバー41PNOを構成し、U相並列接続用ブスバー41O1は、複数のスイッチモジュール410に含まれる全てのアームと、複数のスイッチモジュール410のそれぞれからの全ての経路が合流する合流部との間のそれぞれの経路の長さが略等しい。【選択図】図2 |
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