RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT

To provide a resist composition achieving higher sensitivity and having good lithographic characteristics, a resist pattern forming method using the resist composition, a compound usable for producing the resist composition, and an acid diffusion control agent containing the compound.SOLUTION: The r...

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Hauptverfasser: INARI TAKATOSHI, MATSUSHITA TETSUYA
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a resist composition achieving higher sensitivity and having good lithographic characteristics, a resist pattern forming method using the resist composition, a compound usable for producing the resist composition, and an acid diffusion control agent containing the compound.SOLUTION: The resist composition, which generates an acid upon exposure and whose solubility in a developer changes by the action of an acid, contains: a resin component (A1) whose solubility in a developer changes by the action of an acid; and a compound (D0) represented by the following general formula (d0). In the formula, Rd01 represents a monovalent organic group having at least two optionally substituted benzene rings; Rd02 represents a monovalent organic group or a hydrogen atom; and Ld01 represents a single bond or a divalent linking group.SELECTED DRAWING: None 【課題】高感度化が図れ、且つリソグラフィー特性が良好なレジスト組成物、当該レジスト組成物を用いたレジストパターン形成方法、当該レジスト組成物の製造に利用可能な化合物、及び該化合物を含有する酸拡散制御剤の提供。【解決手段】露光により酸を発生し、かつ、酸の作用により現像液に対する溶解性が変化するレジスト組成物であって、酸の作用により現像液に対する溶解性が変化する樹脂成分(A1)と、下記一般式(d0)で表される化合物(D0)と、を含有する、レジスト組成物。式中、Rd01は置換基を有してもよいベンゼン環を少なくとも2個有する1価の有機基を表し;Rd02は1価の有機基又は水素原子を表し;Ld01は単結合又は2価の連結基を表す。[化1]TIFF2024065677000116.tif16170【選択図】なし