ELECTRO-OPTIC DEVICE AND ELECTRONIC APPARATUS
To provide an electro-optic device that can improve the light-blocking property with respect to light entering a semiconductor layer, and an electronic apparatus.SOLUTION: An electro-optic device includes a substrate, a transistor including a drain region to which a pixel potential is applied, a sem...
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Sprache: | eng ; jpn |
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Zusammenfassung: | To provide an electro-optic device that can improve the light-blocking property with respect to light entering a semiconductor layer, and an electronic apparatus.SOLUTION: An electro-optic device includes a substrate, a transistor including a drain region to which a pixel potential is applied, a semiconductor layer extending in a first direction, and a gate electrode, a scan line electrically connected to the gate electrode, a first insulating layer disposed between the scan line and the gate electrode, and a light-blocking part with a light-blocking property. The semiconductor layer, the gate electrode, the first insulating layer, and the scan line are arranged in this order from the substrate. The light-blocking part surrounds the semiconductor layer when viewed from the first direction. The light-blocking part includes a first part disposed in the first insulating layer, and the pixel potential is applied to the light-blocking part.SELECTED DRAWING: Figure 5
【課題】半導体層に入射する光に対する遮光性の向上を図ることができる電気光学装置、および電子機器を提供すること。【解決手段】電気光学装置は、基板と、画素電位が印加されるドレイン領域を含み、第1方向に延びる半導体層、およびゲート電極を有するトランジスターと、前記ゲート電極に電気的に接続された走査線と、前記走査線と前記ゲート電極との間に配置される第1絶縁層と、遮光性の遮光部と、を備え、前記半導体層と、前記ゲート電極と、前記第1絶縁層と、前記走査線とは、前記基板からこの順に並び、前記遮光部は、前記第1方向にみて前記半導体層を囲み、前記遮光部は、前記第1絶縁層に配置される第1部分を含み、前記遮光部には、前記画素電位が印加される。【選択図】図5 |
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