SEMICONDUCTOR LASER DEVICE

To obtain a semiconductor laser device that can monitor the state of a semiconductor laser with a simple configuration.SOLUTION: A semiconductor laser device according to the present disclosure includes a semiconductor substrate having a light emitting layer, a light absorption layer provided on the...

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1. Verfasser: MITSUYAMA HIROSHI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To obtain a semiconductor laser device that can monitor the state of a semiconductor laser with a simple configuration.SOLUTION: A semiconductor laser device according to the present disclosure includes a semiconductor substrate having a light emitting layer, a light absorption layer provided on the semiconductor substrate and generating heat by absorbing light emitted by the light emitting layer, a first metal layer provided on the light absorption layer, and a second metal layer provided on the first metal layer and of a different type from the first metal layer.SELECTED DRAWING: Figure 1 【課題】簡易な構成で半導体レーザの状態をモニタできる半導体レーザ装置を得ることを目的とする。【解決手段】本開示に係る半導体レーザ装置は、発光層を有する半導体基板と、前記半導体基板の上に設けられ、前記発光層が発する光を吸収して発熱する光吸収層と、前記光吸収層の上に設けられた第1金属層と、前記第1金属層の上に設けられ前記第1金属層とは異なる種類の第2金属層と、を備える。【選択図】図1