SUBSTRATE AGENT, AND METHOD FOR MANUFACTURING STRUCTURE INCLUDING PHASE-SEPARATION STRUCTURE
To provide a substrate agent which has a large bake temperature margin in film-formation of a substrate agent layer and enables film-formation at a low temperature, and a method for manufacturing a structure including a phase-separation structure using the substrate agent.SOLUTION: A substrate agent...
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Zusammenfassung: | To provide a substrate agent which has a large bake temperature margin in film-formation of a substrate agent layer and enables film-formation at a low temperature, and a method for manufacturing a structure including a phase-separation structure using the substrate agent.SOLUTION: A substrate agent is used for phase separation of a layer containing a block copolymer on a substrate, and contains a resin component (A1) having a structural unit represented by a following general formula (u1) and a structural unit represented by a following general formula (u2), wherein R11 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; R12 represents a substituent; and n represents an integer of 0 to 5, in the general formula (u2), R2 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; L2 represents a single bond or a divalent connection group; and Y2 represents a divalent connection group having 5 to 15 carbon atoms.SELECTED DRAWING: None
【課題】下地剤層成膜時のベーク温度マージンが大きく、低温での成膜が可能な、下地剤、及び前記下地剤を用いた相分離構造を含む構造体の製造方法を提供する。【解決手段】基板上で、ブロックコポリマーを含む層を相分離させるために用いられる下地剤であって、下記一般式(u1)で表される構成単位と、下記一般式(u2)で表される構成単位とを有する樹脂成分(A1)を含有する、下地剤。[R11は水素原子、炭素原子数1~5のアルキル基又は炭素原子数1~5のハロゲン化アルキル基を表し;R12は置換基を表し;nは0~5の整数を表す。一般式(u2)中、R2は水素原子、炭素原子数1~5のアルキル基又は炭素原子数1~5のハロゲン化アルキル基を表し;L2は単結合又は2価の連結基を表し;Y2は炭素原子数5~15の2価の連結基を表す。]TIFF2024062920000020.tif48170【選択図】なし |
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