INSPECTION METHOD OF SEMICONDUCTOR DEVICE
To provide an inspection method for a semiconductor device which can easily detect a defect of the semiconductor device using a liquid crystal.SOLUTION: Provided is an inspection method for a semiconductor device including a plurality of reflective elements arranged in a matrix in an x direction, an...
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Zusammenfassung: | To provide an inspection method for a semiconductor device which can easily detect a defect of the semiconductor device using a liquid crystal.SOLUTION: Provided is an inspection method for a semiconductor device including a plurality of reflective elements arranged in a matrix in an x direction, and a y direction intersecting the x direction, each of which includes a liquid crystal. The inspection method includes: arranging a sensor head including a plurality of sensor electrodes on the semiconductor device; inputting a first voltage signal to the semiconductor device so that a dielectric constant of the liquid crystal comes into a predetermined first state in each of the plurality of reflective elements, then acquiring a first capacitance corresponding to each of the plurality of reflective elements through the plurality of sensor electrodes; inputting a second voltage signal to the semiconductor device so that the dielectric constant of the liquid crystal comes into a predetermined second state in each of the plurality of reflective elements, then acquiring a second capacitance corresponding to each of the plurality of reflective elements through the plurality of sensor electrodes; calculating a difference value between the first capacitance and the second capacitance; and determining whether or not the difference value is equal to or less than a predetermined threshold value.SELECTED DRAWING: Figure 5
【課題】液晶を用いた半導体装置の欠陥を簡易に判定することができる、半導体装置の検査方法を提供すること。【解決手段】各々が液晶を含む、x方向および前記x方向と交差するy方向にマトリクス状に配置された複数の反射素子を含む半導体装置の検査方法であって、複数のセンサ電極を含むセンサヘッドを、半導体装置の上に配置し、複数の反射素子の各々において、液晶の誘電率が所定の第1状態となるように半導体装置に第1の電圧信号を入力した後、複数のセンサ電極を介して、複数の反射素子の各々に対応する第1の容量を取得し、複数の反射素子の各々において、液晶の誘電率が所定の第2状態となるように半導体装置に第2の電圧信号を入力した後、複数のセンサ電極を介して、複数の反射素子の各々に対応する第2の容量を取得し、第1の容量と前記第2の容量との差分値を算出し、差分値が所定のしきい値以下であるか否かを判定する。【選択図】図5 |
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