ACOUSTIC WAVE DEVICE AND MANUFACTURING METHOD OF ACOUSTIC WAVE DEVICE

To rationally prepare a structure that facilitates dissipation of heat of a device chip constituting an acoustic wave device to the outside without complicating the structure and without complicating the manufacturing processes.SOLUTION: An acoustic wave device 1 includes a device chip 3 having a fu...

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1. Verfasser: KANEKO HIROOMI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To rationally prepare a structure that facilitates dissipation of heat of a device chip constituting an acoustic wave device to the outside without complicating the structure and without complicating the manufacturing processes.SOLUTION: An acoustic wave device 1 includes a device chip 3 having a functional surface 3a where a resonator 7 is formed and a back surface 3b facing the functional surface 3a. The functional surface 3a includes a main face part 3e that positions the resonator 7 in a plane surrounded by a predetermined boundary L, and an additional face part 3g positioned outside the main face part 3e. A percentage of a piezoelectric material 3r occupied in a volume of a main part 3f that is a part sandwiched between the main face part 3e and the back surface 3b in the device chip 3 is set to be larger than a percentage of a piezoelectric material r occupied in a volume of an additional part 3h that is a part sandwiched between the additional face part 3g and the back surface 3b in the device chip 3.SELECTED DRAWING: Figure 2 【課題】弾性波デバイスを構成するデバイスチップの熱を外部に放熱しやすくする構造を、その構造の複雑化を招くことなく、かつ、その製造工程の複雑化を招くことなく、合理的に備えさせる。【解決手段】共振器7の形成された機能面3aと、この機能面3aに対向する背面3bとを持ったデバイスチップ3を備えてなる弾性波デバイス1である。前記機能面3aは、所定の境界Lに囲まれた面内に前記共振器7を位置させる主要面部3eと、前記主要面部3e外に位置される付随面部3gとからなり、前記デバイスチップ3における前記主要面部3eと前記背面3bとに挟まれた部分となる主要部3fの体積に占める圧電体3rの割合が、前記デバイスチップ3における前記付随面部3gと前記背面3bとに挟まれた部分となる付随部3hの体積に占める前記圧電体rの割合よりも大きくなるようにしてなる。【選択図】図2