METHOD FOR FORMING METAL FILM

To provide a method for forming a metal film capable of forming a metal film using an electrolyte film containing an anion-type metal complex ion.SOLUTION: In a method for forming a metal film, a metal film derived from metal ions is formed on the surface of a base material by applying a voltage bet...

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Zusammenfassung:To provide a method for forming a metal film capable of forming a metal film using an electrolyte film containing an anion-type metal complex ion.SOLUTION: In a method for forming a metal film, a metal film derived from metal ions is formed on the surface of a base material by applying a voltage between an anode and the base material in a state where an electrolyte membrane containing the metal ions is placed between the anode and the base material serving as a cathode and is brought into contact with the surface of the base material. The method includes a substitution step in which OH- in an anion exchange membrane containing OH- is substituted with an anion-type metal complex ion, and a film formation step in which the metal film derived from the anion-type metal complex ion is formed by applying the voltage in a state where the substituted anion exchange membrane is placed between the anode and the base material as the electrolyte membrane and is brought into contact with the surface of the base material.SELECTED DRAWING: Figure 1 【課題】アニオン型金属錯イオンを含有する電解質膜を用い、金属皮膜を成膜できる金属皮膜の成膜方法を提供することにある。【解決手段】本発明の金属皮膜の成膜方法は、金属イオンを含有する電解質膜を陽極と陰極となる基材との間に設置して上記基材の表面に接触させた状態において、上記陽極と上記基材との間に電圧を印加することにより、上記基材の表面に上記金属イオンに由来した金属皮膜を成膜する成膜方法であって、OH-を含有する陰イオン交換膜の上記OH-をアニオン型金属錯イオンで置換する置換工程と、上記置換された上記陰イオン交換膜を上記電解質膜として上記陽極と上記基材との間に設置して上記基材の表面に接触させた状態において、上記電圧を印加することにより、上記アニオン型金属錯イオンに由来した上記金属皮膜を成膜する成膜工程と、を備えることを特徴とする。【選択図】図1