POLISHING LIQUID COMPOSITION FOR SILICON OXIDE FILM

To provide a polishing liquid composition for a silicon oxide film that can improve both its polishing speed and the in-plane uniformity of the surface of a substrate after polishing.SOLUTION: The polishing liquid composition for a silicon oxide film includes cerium oxide particles (component A), a...

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Hauptverfasser: INOUE MASAKI, YAMAGUCHI TETSUSHI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a polishing liquid composition for a silicon oxide film that can improve both its polishing speed and the in-plane uniformity of the surface of a substrate after polishing.SOLUTION: The polishing liquid composition for a silicon oxide film includes cerium oxide particles (component A), a compound represented by the following formula (I) (component B), and an aqueous medium. In the formula (I), R represents an aliphatic hydrocarbon group with a carbon number of 1 or more and 6 or less. M represents a hydrogen atom, an alkali metal, an alkaline earth metal, and an organic cation or ammonium (NH4+).SELECTED DRAWING: None 【課題】一態様において、酸化珪素膜の研磨速度向上と研磨後の基板表面の面内均一性向上とを両立できる酸化珪素膜用研磨液組成物を提供する。【解決手段】本開示は、一態様において、酸化セリウム粒子(成分A)と、下記式(I)で表される化合物(成分B)と、水系媒体と、を含有する、酸化珪素膜用研磨液組成物に関する。TIFF2024058420000007.tif14170前記式(I)中、Rは、炭素数1以上6以下の脂肪族炭化水素基を示し、Mは、水素原子、アルカリ金属、アルカリ土類金属、有機カチオン又はアンモニウム(NH4+)を示す。【選択図】なし