SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

To provide a semiconductor device in which a plug can be favorably formed in a contact region, and a method for manufacturing the same.SOLUTION: According to an embodiment, a semiconductor device comprises a stacked film which includes a plurality of first insulating films and a plurality of electrode layers alternately stacked in a first direction, and which includes a first region and a second region. The device further comprises a columnar portion that is provided within the first region, and in which a plurality of memory cells are provided in intersection parts with the plurality of electrode layers. The device further comprises a columnar portion which is provided within the second region and extends in the first direction. The device further comprises a plug which is provided on a first electrode layer of the plurality of electrode layers within the second region. Further, when a first side surface of the columnar portion faces a second side surface of the plug, shape of the second side surface is concave in a direction of the first side surface.SELECTED DRAWING: Figure 1 【課題】コンタクト領域内にプラグを好適に形成可能な半導体装置およびその製造方法を提供する。【解決手段】一の実施形態によれば、半導体装置は、第１方向に複数の第１絶縁膜と複数の電極層とを交互に含み、第１領域と第２領域とを含む積層膜を備える。前記装置はさらに、前記第１領域内に設けられ、前記複数の電極層との交差部分に複数のメモリセルが設けられた柱状部を備える。前記装置はさらに、前記第２領域内に設けられ、前記第１方向に延びる柱部を備える。前記装置はさらに、前記第２領域内において前記複数の電極層のうちの第１電極層上に設けられたプラグを備える。さらに、前記柱部の第１側面が、前記プラグの第２側面と対向している場合に、前記第２側面の形状は、前記第１側面の方向に凹型である。【選択図】図１