POROUS OXIDE SEMICONDUCTOR PARTICLES

To provide porous oxide semiconductor particles having a beaded structure and exhibiting relatively high conductivity.SOLUTION: Porous oxide semiconductor particles include a beaded structure in which porous primary particles are connected, consisting of an aggregate of crystallites made of tin oxid...

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Bibliographische Detailangaben
Hauptverfasser:	INABA MASANORI, KODAMA KENSAKU, NOBUKAWA KEN
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ELECTRICITY INORGANIC CHEMISTRY METALLURGY PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY
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Beschreibung
Zusammenfassung:	To provide porous oxide semiconductor particles having a beaded structure and exhibiting relatively high conductivity.SOLUTION: Porous oxide semiconductor particles include a beaded structure in which porous primary particles are connected, consisting of an aggregate of crystallites made of tin oxide doped with pentavalent antimony, the doping amount of pentavalent antimony is 2.5 at% or more. Here, "doping amount of pentavalent antimony" is a value obtained from XAFS measurement and ICP analysis, is also the ratio of the number of atoms of pentavalent antimony to the total number of atoms of tin and antimony contained in the porous oxide semiconductor particles.SELECTED DRAWING: Figure 7 【課題】連珠構造を備えており、かつ、相対的に大きな導電率を示す多孔質酸化物半導体粒子を提供すること。【解決手段】多孔質酸化物半導体粒子は、５価のアンチモンがドープされた酸化スズからなる結晶子の集合体からなる多孔質の一次粒子が連結した連珠構造を備え、前記５価のアンチモンのドープ量が２．５ａｔ％以上であるものからなる。ここで、「５価のアンチモンのドープ量」とは、ＸＡＦＳ測定とＩＣＰ分析から得られる値であって、前記多孔質酸化物半導体粒子に含まれるスズ及びアンチモンの総原子数に対する前記５価のアンチモンの原子数の割合をいう。【選択図】図７