SiC DEVICE AND SiC DEVICE MANUFACTURING METHOD

To provide an SiC device with a low boron content.SOLUTION: The SiC device comprises a SiC substrate, and an epitaxial layer of SiC laminated on the SiC substrate. The epitaxial layer contains impurities that determine the conductivity type, and boron that has a different conductivity type from the...

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Bibliographische Detailangaben
Hauptverfasser:	UMEDA KIICHI, TANAKA KENSHO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	To provide an SiC device with a low boron content.SOLUTION: The SiC device comprises a SiC substrate, and an epitaxial layer of SiC laminated on the SiC substrate. The epitaxial layer contains impurities that determine the conductivity type, and boron that has a different conductivity type from the impurities. The concentration of the boron as measured by secondary ion mass spectrometry is less than 5.0×1012 cm-3.SELECTED DRAWING: Figure 1 【課題】ボロンの含有量が少ない、ＳｉＣデバイスを得ることを目的とする。【解決手段】このＳｉＣデバイスは、ＳｉＣ基板と、前記ＳｉＣ基板に積層されたＳｉＣのエピタキシャル層と、を備え、前記エピタキシャル層は、導電型を決定する不純物と、前記不純物と導電型が異なるボロンと、を含み、二次イオン質量分析法で測定した前記ボロンの濃度は５．０×１０１２ｃｍ－３未満である。【選択図】図１