DEPOSITION METHOD AND DEPOSITION APPARATUS

To provide a technology for improving etching resistance of a resist film.SOLUTION: A deposition method includes: preparing a substrate having a resist film with an opening formed on an upper surface thereof; allowing metal to infiltrate into at least an upper part of the resist film by supplying a...

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Bibliographische Detailangaben
Hauptverfasser:	SAKAI SOICHIRO, YAMAJI TOMOHITO, MURAKAMI HIROKI, YAMADA KAZUKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	To provide a technology for improving etching resistance of a resist film.SOLUTION: A deposition method includes: preparing a substrate having a resist film with an opening formed on an upper surface thereof; allowing metal to infiltrate into at least an upper part of the resist film by supplying a metal-containing gas containing the metal to the substrate; and forming a protective film selectively containing silicon and oxygen on the upper surface of the resist film as compared to a side surface and a bottom surface of the opening by supplying precursor gas containing silanol to the substrate.SELECTED DRAWING: Figure 1 【課題】レジスト膜のエッチング耐性を向上する、技術を提供する。【解決手段】成膜方法は、開口部が上面に形成されたレジスト膜を有する基板を準備することと、前記基板に対して金属を含有する金属含有ガスを供給することで、前記金属を前記レジスト膜の少なくとも上部に浸潤させることと、前記基板に対してシラノールを含有する前駆体ガスを供給することで、前記開口部の側面及び底面に比べて前記レジスト膜の前記上面に選択的にケイ素と酸素を含有する保護膜を形成することと、を有する。【選択図】図１