SEMICONDUCTOR SUBSTRATE BONDED BODY AND MANUFACTURING METHOD FOR THE SAME

To provide a structure that has reliability and satisfies bonding strength and a high-speed signal transmission characteristic.SOLUTION: A structure of a pair of substrates 100 to be bonded together includes a substrate 110 having an insulating surface 115 including a signal transmission metal region 113 and a ground metal region 111 insulated from the signal transmission metal region 113, and a substrate 120 having an insulating surface 125 that is bonded to the substrate 110 and includes a signal transmission metal region 123 and a ground metal region 121 insulated from the signal transmission metal region 123. The signal transmission metal region 113 and the signal transmission metal region 123 are bonded and the ground metal region 111 and the ground metal region 121 are bonded.SELECTED DRAWING: Figure 1 【課題】信頼性があり、接合強度と高速信号伝送特性とを満足する構造を提供する。【解決手段】接合される一対の基板１００の構造であって、信号伝送金属領域１１３及び信号伝送金属領域１１３から絶縁されたグランド金属領域１１１を備える絶縁面１１５を有する基板１１０と、基板１１０と接合され、信号伝送金属領域１２３及び信号伝送金属領域１２３から絶縁されたグランド金属領域１２１を備える絶縁面１２５を有する基板１２０と、を備え、信号伝送金属領域１１３と信号伝送金属領域１２３は接合され、かつ、グランド金属領域１１１とグランド金属領域１２１が接合される。【選択図】図１