FILM FORMATION DEVICE

To provide a film formation device capable of forming, on a substrate, an object film having more uniform film thickness.SOLUTION: This film formation device 100 comprises a chamber 1, a mounting stand 21, and a fluid head 3. The fluid head 3 is provided to a position, within the chamber 1, that faces a first main surface of a substrate W that is mounted on the mounting stand 21. The fluid head 3 has a plasma chamber 4b, a plasma source 5, a plurality of first outflow ports 4c, a gas flow path 6b, and a plurality of second outflow ports 6c. The plasma source 5 turns a first raw-material gas into plasma in the plasma chamber 4b. The first outflow ports 4c are arranged in a two-dimensional array in an overlapping region that overlaps the first main surface of the substrate W as seen in plan view. An active species that is derived from the first raw-material gas flows from the first outflow ports 4c toward the first main surface of the substrate W. The plurality of second outflow ports 6c are arranged in a two-dimensional array at different positions than the plurality of first outflow ports 4c in the overlapping region. A second raw-material gas flows from the plurality of second outflow ports 6c toward the first main surface of the substrate W.SELECTED DRAWING: Figure 1 【課題】より均一な膜厚で対象膜を基板に形成することができる成膜装置を提供する。【解決手段】成膜装置１００はチャンバ１と載置台２１と流体ヘッド３とを備える。流体ヘッド３は、チャンバ１内において、載置台２１に載置された基板Ｗの第１主面と向かい合う位置に設けられている。流体ヘッド３はプラズマ室４ｂとプラズマ源５と複数の第１流出口４ｃとガス流路６ｂと複数の第２流出口６ｃとを有する。プラズマ源５はプラズマ室４ｂにおいて第１原料ガスをプラズマ化させる。第１流出口４ｃは、基板Ｗの第１主面と平面視で重なる重複領域において２次元的に分散配列される。第１原料ガス由来の活性種は第１流出口４ｃから基板Ｗの第１主面に向かって流出する。複数の第２流出口６ｃは当該重複領域において、複数の第１流出口４ｃとは異なる位置に２次元的に分散配列される。第２原料ガスは複数の第２流出口６ｃから基板Ｗの第１主面に向かって流出する。【選択図】図１