SUBSTRATE PROCESSING APPARATUS, METHOD FOR PROCESSING SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PROGRAM

To provide a technology that can reduce power consumption by a vacuum pump.SOLUTION: A substrate processing apparatus includes: a processing chamber for processing a substrate; a gas flow channel for connecting a plurality of exhaust devices in parallel with the processing chamber; an exhaust contro...

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Bibliographische Detailangaben
Hauptverfasser:	TANIUCHI MASAMICHI, OHASHI TADASHI, YAMAGUCHI HIDETO, KIKUCHI TOSHIYUKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a technology that can reduce power consumption by a vacuum pump.SOLUTION: A substrate processing apparatus includes: a processing chamber for processing a substrate; a gas flow channel for connecting a plurality of exhaust devices in parallel with the processing chamber; an exhaust control unit for controlling circulation of the gas in the gas flow channel; an output control unit for controlling output of the exhaust devices; and a control unit configured to be capable of controlling the exhaust control unit and the output control unit.SELECTED DRAWING: Figure 2 【課題】真空ポンプの電力消費量を低減することが可能な技術を提供する。【解決手段】基板を処理する処理室と、前記処理室に対して複数の排気装置を並列に接続するガスの流路と、前記ガスの流路におけるガスの流通を制御する排気制御部と、前記排気装置の出力を制御する出力制御部と、前記排気制御部と前記出力制御部とを制御可能に構成される制御部と、を備える。【選択図】図２