STORAGE

To provide a storage that has a switching element with excellent characteristics.SOLUTION: A storage of an embodiment comprises: a first conductive layer; a second conductive layer; a third conductive layer; a resistance change layer provided between the first conductive layer and the second conductive layer; and a switching layer provided between the second conductive layer and the third conductive layer. The second conductive layer is provided between the first conductive layer and the third conductive layer. The switching layer includes: at least one first substance selected from the group consisting of an oxide of at least one element selected from the group consisting of Cr, La, Ce, Y, Sc, Zr, and Hf, a nitride of the at least one element, and an oxynitride of the at least one element; a second substance formed of at least one metal selected from the group consisting of Te, Se, Sb, Bi, Ge, and Sn; and at least one third substance selected from the group consisting of an oxide of the second substance, a nitride of the second substance, and an oxynitride of the second substance.SELECTED DRAWING: Figure 2 【課題】特性の優れたスイッチング素子を有する記憶装置を提供する。【解決手段】実施形態の記憶装置は、第１の導電層と、第２の導電層と、第３の導電層と、第１の導電層と第２の導電層との間に設けられた抵抗変化層と、第２の導電層と第３の導電層との間に設けられたスイッチング層と、を備える。第１の導電層と第３の導電層の間に第２の導電層が設けられる。スイッチング層は、Ｃｒ、Ｌａ、Ｃｅ、Ｙ、Ｓｃ、Ｚｒ、及びＨｆからなる群から選ばれる少なくとも一つの元素の酸化物、少なくとも一つの元素の窒化物、及び少なくとも一つの元素の酸窒化物からなる群から選ばれる少なくとも一つの第１の物質と、Ｔｅ、Ｓｅ、Ｓｂ、Ｂｉ、Ｇｅ、及びＳｎからなる群から選ばれる少なくとも一つの金属からなる第２の物質と、第２の物質の酸化物、第２の物質の窒化物、及び第２の物質の酸窒化物からなる群から選ばれる少なくとも一つの第３の物質と、を含む。【選択図】図２