FILM DEPOSITION METHOD AND FILM DEPOSITION SYSTEM

To provide a film deposition method and a film deposition system capable of improving a film quality of a graphene film and an underlayer metal film.SOLUTION: A film deposition method is a film deposition method for depositing a graphene film. The film deposition method includes: a step of preparing...

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Bibliographische Detailangaben
Hauptverfasser:	MATSUMOTO TAKASHI, IFUKU RYOTA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	To provide a film deposition method and a film deposition system capable of improving a film quality of a graphene film and an underlayer metal film.SOLUTION: A film deposition method is a film deposition method for depositing a graphene film. The film deposition method includes: a step of preparing a substrate having a metal film; a first step where a plasma is generated by supplying a carbon containing gas when a substrate is set at a first temperature and a graphene film having a first thickness is formed on the metal film using the plasma generated; a second step where the first thickness is reduced while a continuous film of the graphene film is maintained when the substrate is set at a second temperature higher than the first temperature and a solid solution of a carbon atom into the metal film is formed; and a third step where a thickness of the graphene film is increased by precipitating a carbon atom in the metal film in a boundary between the metal film and the graphene film to form the graphene film with an improved quality when the substrate is set at a third temperature lower than the second temperature.SELECTED DRAWING: Figure 7 【課題】グラフェン膜と下地金属膜の膜質を改善することができる成膜方法および成膜システムを提供する。【解決手段】成膜方法は、グラフェン膜を成膜する成膜方法であって、金属膜を有する基板を準備する工程と、基板を第１の温度とし、炭素含有ガスを供給してプラズマを生成し、生成したプラズマを用いて金属膜上に第１の膜厚を有するグラフェン膜を形成する第１の工程と、基板を第１の温度より高い第２の温度とし、グラフェン膜の連続膜を維持しつつ第１の膜厚より減膜させ、金属膜中に炭素原子を固溶させる第２の工程と、基板を第２の温度より低い第３の温度とし、金属膜中の炭素原子を金属膜とグラフェン膜との界面に析出させてグラフェン膜を増膜しつつ、改質したグラフェン膜を形成する第３の工程と、を有する。【選択図】図７