SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

To form a metal layer with a favorable structure.SOLUTION: According to one embodiment, a semiconductor device comprises a metal layer provided above a transistor on a first substrate. The metal layer includes: a first region extending in a first direction; and a second region protruded from the first region in a second direction, having a smaller width in the first direction than the first region. A first corner part that has an angle larger than 180 degrees when seen from a third direction is provided between a base end part of the second region and the first region. The metal layer includes: a first portion located in the first region, having a lower surface at a first height; and a second portion located in the second region, having a lower surface at a second height lower than the first height. A step at a boundary between the first portion and the second portion is separated from an end edge of the second region at a first position near the first corner part in the second direction, and is close to the end edge of the second region at a second position separated from the first corner part farther than the first position.SELECTED DRAWING: Figure 5 【課題】好適な構造を有する金属層を形成する。【解決手段】一の実施形態によれば、半導体装置は、第１基板上のトランジスタの上方に設けられた金属層を備える。前記金属層は、第１方向に延びる第１領域と、前記第１領域よりも前記第１方向の幅が小さく、前記第１領域から第２方向に突出する第２領域とを含み、前記第２領域の基端部と前記第１領域との間には、第３方向から見て１８０度よりも大きい角度を有する第１コーナー部が設けられている。また、前記金属層は、前記第１領域内に位置し、第１高さに下面を有する第１部分と、前記第２領域内に位置し、前記第１高さよりも低い第２高さに下面を有する第２部分とを含み、前記第１部分と前記第２部分との境界の段差は、前記第２方向において、前記第１コーナー部の近傍の第１位置で、前記第２領域の端縁から離間し、前記第１位置よりも前記第１コーナー部から離れた第２位置で、前記第２領域の端縁に近接する。【選択図】図５