SEMICONDUCTOR STORAGE DEVICE

To provide a semiconductor storage device capable of improving a cell integration degree.SOLUTION: A semiconductor storage device comprises: an integrated wire SI including a first wiring layer SGD3 including a first region SU3 and a second region SU2, which is disposed in parallel with the first region in a first direction Y, and a second wiring layer SGD2 disposed higher than the first wiring layer in a second direction Z across the first direction, not including the first region and including the second region; a first memory pillar MP disposed in the first region SU3 and passing the first wiring layer SGD3 in the second direction Z; and a second memory pillar MP disposed in the second region SU2 and passing the first wiring layer SGD3 and the second wiring layer SGD2 in the second direction Z.SELECTED DRAWING: Figure 4 【課題】セル集積度を向上させることができる半導体記憶装置を提供する。【解決手段】一実施形態の半導体記憶装置は、第１領域ＳＵ３及び第１領域と第１方向Ｙに並ぶ第２領域ＳＵ２を含む第１配線層ＳＧＤ３と、第１方向と交差する第２方向Ｚに、第１配線層よりも上方に配置され、第１領域を含まず且つ第２領域を含む第２配線層ＳＧＤ２とを有する積層配線ＳＩと、第１領域ＳＵ３に配置され、第２方向Ｚに第１配線層ＳＧＤ３を通過する第１メモリピラーＭＰと、第２領域ＳＵ２に配置され、第２方向Ｚに第１配線層ＳＧＤ３及び第２配線層ＳＧＤ２を通過する第２メモリピラーＭＰとを備える。【選択図】図４