MAGNETIC FILAMENT MEMORY AND MANUFACTURING METHOD OF THEM

To provide a magnetic filament memory capable of forming a magnetic domain in which a fluctuation of a magnet wall is reduced when writing information into a magnetic filament.SOLUTION: A magnetic filament memory 1 comprises: a substrate 11; a liner storage element 13 provided onto the substrate 11; an insulation layer 12 that is provided onto the substrate 11 in a predetermined film thickness so as to cover at least one part of a side surface of the storage element 13; an inter-layer insulation layer 14 that is a predetermined region where the storage element 13 and the insulation layer 12 are connected, and the storage element 13 and the insulation layer 12 are adjacent, and that convers so as to continuous the predetermined region of an upper surface of the storage element 13 and the predetermined region on the upper surface of the insulation layer 12; and a magnetic filament 15 that is arranged so as to be orthogonal to the storage element 13 in an upper surface view onto the inter-layer insulation layer 14. A height of the upper surface of the storage element 13 is different from that of the upper surface of the insulation layer 12. The height of the upper surface of the magnetic filament 15 just above the storage element 13 is that of the upper surface of the magnetic filament 15 just above the insulation layer 12 that is adjacent to the storage element 13 are different.SELECTED DRAWING: Figure 1 【課題】磁性細線に情報を書き込むときに磁壁の揺らぎを低減した磁区を形成することができる磁性細線メモリを提供する。【解決手段】磁性細線メモリ１は、基板１１と、基板１１上に設けられた直線状の記録素子１３と、記録素子１３の側面の少なくとも一部を被覆するように所定の膜厚で基板１１上に設けられる絶縁層１２と、記録素子１３と絶縁層１２とが接続して記録素子１３と絶縁層１２とが隣り合う所定領域であって記録素子１３の上面の所定領域と絶縁層１２の上面の所定領域とを連続するように被覆する層間絶縁層１４と、層間絶縁層１４の上に上面視において記録素子１３に直交するように配置される磁性細線１５と、を備え、記録素子１３の上面の高さが隣り合う絶縁層１２の上面の高さと異なる。記録素子１３の直上における磁性細線１５の上面の高さと、記録素子１３に隣り合う絶縁層１２の直上における磁性細線１５の上面の高さと、は異なる。【選択図】図１