SEMICONDUCTOR DEVICE, AND, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

To suppress an increase of a saturation current.SOLUTION: A semiconductor device comprises: a first trench which is provided while extending from a top face of a first impurity layer into a first semiconductor layer; a second trench which is provided while extending from a top face of a second impurity layer to lower than a bottom face of the first semiconductor layer; a second semiconductor layer of a first conductivity type which is provided in a surface layer of the first impurity layer and disposed while being held between the first trench and a third impurity layer in a planar view; and a third semiconductor layer of the first conductivity type which is provided in a surface layer of the second impurity layer and disposed while being held between the second trench and the third impurity layer in the planar view.SELECTED DRAWING: Figure 1 【課題】飽和電流の増加を抑制する。【解決手段】半導体装置は、第１の不純物層の上面から第１の半導体層内に達して設けられる第１のトレンチと、第２の不純物層の上面から第１の半導体層の下面よりも下方に達して設けられる第２のトレンチと、第１の不純物層の表層に設けられ、平面視で第１のトレンチと第３の不純物層とに挟まれて配置される、第１の導電型の第２の半導体層と、第２の不純物層の表層に設けられ、平面視で第２のトレンチと第３の不純物層とに挟まれて配置される、第１の導電型の第３の半導体層とを備える。【選択図】図１