SEMICONDUCTOR STORAGE DEVICE

To provide a semiconductor storage device which can be suitably manufactured.SOLUTION: A semiconductor storage device comprises: a substrate; a plurality of first conductive layers which are arrayed in a first direction intersecting the surface of the substrate; a memory structure which includes a first semiconductor layer opposed to the first conductive layer; first wiring; a second conductive layer; a first insulation layer which divides the plurality of first conductive layers in a second direction; a second insulation layer which divides one or the plurality of first conductive layers arranged on the side closest to the substrate in the plurality of first conductive layers in the second direction; and a third insulation layer which divides one or the plurality of first conductive layers arranged on the side farthest from the substrate in the plurality of first conductive layers in the second direction. The memory structure has a tapered shape whose width in the second direction becomes smaller as being apart from the substrate. The third insulation layer has a tapered shape whose width in the second direction becomes smaller as being closer to the substrate.SELECTED DRAWING: Figure 7 【課題】好適に製造可能な半導体記憶装置を提供する。【解決手段】半導体記憶装置は、基板と、基板の表面と交差する第１方向に並ぶ複数の第１導電層と、第１導電層と対向する第１半導体層を含むメモリ構造と、第１配線と、第２導電層と、複数の第１導電層を第２方向に分断する第１絶縁層と、複数の第１導電層のうち基板に最も近い側に配置された一又は複数の第１導電層を第２方向に分断する第２絶縁層と、複数の第１導電層のうち基板から最も遠い側に配置された一又は複数の第１導電層を第２方向に分断する第３絶縁層とを備える。メモリ構造は、基板から遠ざかるにつれて第２方向の幅が小さくなるテーパー形状を有し、第３絶縁層は、基板に近づくにつれて第２方向の幅が小さくなるテーパー形状を有する。【選択図】図７