SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND MANUFACTURING METHOD OF THE SAME

To provide a semiconductor light-emitting device which has high light emission efficiency, prevents reflectance of a lead frame from being lowered by corrosion, and maintains optical output.SOLUTION: A frame body is formed of a thermoplastic resin along the edge of an upper face of a lead frame, and simultaneously first and second dams for partitioning a region surrounded by the frame body into first, second, and third regions are formed. A light-emitting element is die-bonded into the second region. A pair of electrodes of the light-emitting element are wire-bonded to the upper face of the lead frame in the first and second regions. The insides of the first and second regions are filled with a first sealing member. The light-emitting element and the first sealing member are filled with a second sealing member so as to cover the light-emitting element and the first sealing member. The heights of the first and second dams are lower than the upper surface of the light-emitting element. A coefficient of thermal expansion of the first sealing member is a value between a coefficient of thermal expansion of the second sealing member and a coefficient of thermal expansion of the lead frame.SELECTED DRAWING: Figure 1 【課題】光の出射効率が高く、かつ、リードフレームの反射率が腐食により低下しにくく、光出力が維持される半導体発光装置を提供する。【解決手段】熱可塑性樹脂により、リードフレームの上面の縁に沿って枠体を形成すると同時に、枠体で囲まれた領域を第１、第２および第３領域に仕切る第１および第２堰堤を形成する。第２領域内に発光素子をダイボンディングする。発光素子の一対の電極を第１、第２領域内のリードフレーム上面にワイヤボンディングする。第１、第２領域内を第１封止部材で充填する。発光素子および第１封止部材を覆うように、第２封止部材で充填する。第１、第２堰堤の高さは、発光素子の上面よりも低い。第１封止部材の熱膨張係数は、第２封止部材の熱膨張係数とリードフレームの熱膨張係数の間の値である。【選択図】図１