SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

To provide a semiconductor device capable of obtaining good characteristics and a method for manufacturing such a semiconductor device.SOLUTION: According to one embodiment, a semiconductor device includes a silicon carbide member, a first member, a first layer, and a second layer. The silicon carbide member includes a first region. The first member includes silicon and oxygen. The first layer is provided between the first region and the first member. The first layer includes a bond between silicon and nitrogen. The second layer is provided between the first layer and the first member. The second layer includes a bond between silicon and oxygen and a bond between silicon and nitrogen.SELECTED DRAWING: Figure 1 【課題】良好な特性が得られる半導体装置、及び、半導体装置の製造方法を提供する。【解決手段】実施形態によれば、半導体装置は、第１領域を含む炭化シリコン部材と、シリコン及び酸素を含む第１部材と、第１層及び第２層を含む。前記第１層は、前記第１領域と前記第１部材との間に設けられる。前記第１層は、シリコンと窒素との結合を含む。前記第２層は、前記第１層と前記第１部材との間に設けられる。前記第２層は、シリコンと酸素との結合、及び、シリコンと窒素との結合を含む。【選択図】図１