LEAD FRAME AND MANUFACTURING METHOD THEREOF

To solve a problem in which a distance from the outer periphery of a flip chip type semiconductor device to electrodes of a semiconductor element, which is a path through which moisture contained in the outside air (air) can infiltrate, tends to become short, and therefore, there is a risk that mois...

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Hauptverfasser:	NAGATA MASAHIRO, OCHI KAZUNORI, YAMADA MASAHIRO, MATSUI HIDETO, HATSUDA CHIAKI, SEKI KENTARO, SHINOZAKI KAZUHIRO, OKUYAMA DAISUKE
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	To solve a problem in which a distance from the outer periphery of a flip chip type semiconductor device to electrodes of a semiconductor element, which is a path through which moisture contained in the outside air (air) can infiltrate, tends to become short, and therefore, there is a risk that moisture in the air may infiltrate from the outer periphery of the semiconductor device to the electrodes of the semiconductor element.SOLUTION: A lead frame (100) includes a plurality of leads (110), at least a portion of the upper surface of the lead portion (110) and a side wall surface of the lead portion (110) are roughened surfaces, the a* value of the CIELab color space of the rough surface is in the range of 12 to 19, and b*value is in the range of 12 to 17.SELECTED DRAWING: Figure 2 【課題】フリップチップタイプの半導体装置は、半導体装置の外周から半導体素子の電極までの距離であって、外気（空気）に含まれる水分が浸入可能な経路が短くなりやすい。このため、半導体装置の外周から半導体素子の電極まで空気中の水分が浸入するおそれがある。【解決手段】リードフレーム（１００）は、複数のリード部（１１０）を備え、リード部（１１０）の上面の少なくとも一部及びリード部（１１０）の側壁面は、粗化された粗面であり、粗面のＣＩＥＬａｂ色空間のうちのａ＊値が１２～１９の範囲であり、ｂ＊値が１２～１７の範囲である。【選択図】図２