SUBSTRATE PROCESSING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

To provide a substrate processing device and a method of manufacturing a semiconductor device capable of realizing a high throughput in substrate processing using a plasma.SOLUTION: A plasma processing unit 410 used as a processing chamber has: a reaction container 431; a resonance coil 432 provided on a side wall outer periphery of the reaction container; a gas introduction port 433 provided on a container upper end surface inside the reaction container; a gas passage between a top plate 454 and a first baffle plate 460a, in the reaction container; a first gap formed between an outer edge of an upper end of the gas passage and an inner peripheral surface of the reaction container so as to surround the outer edge of the upper end of the gas passage; and a second gap formed between an outer edge of a lower end of the gas passage and the inner peripheral surface of the reaction container so as to surround the outer edge of the lower end of the gas passage. A distance between the upper end of the gas passage and the lower end of the gas passage is longer than a width of the first and second gaps.SELECTED DRAWING: Figure 3 【課題】プラズマを使った基板処理において、スループットの高い基板処理を実現する基板処理装置および半導体装置の製造方法を提供する。【解決手段】処理室として用いられるプラズマ処理ユニット４１０は、反応容器４３１と、反応容器の側壁外周に設けられた共振コイル４３２と、反応容器の内側の容器上端面に設けられたガス導入口４３３と、反応容器内で、トッププレート４５４と第一のバッフル板４６０ａの間のガス流路と、ガス流路の上端の外縁と反応容器の内周面との間に、ガス流路の上端の外縁を囲むように形成された第１の間隙と、ガス流路の下端の外縁と反応容器の内周面との間に、ガス流路の下端の外縁を囲むように形成された第２の間隙と、を有する。ガス流路の上端とガス流路の下端との間の距離は、第１の間隙及び第２の間隙の幅よりも大きい。【選択図】図３