INHIBITOR OF NITRIDE FILM FORMATION ON OXIDE SURFACE, METHOD OF INHIBITING NITRIDE FILM FORMATION ON OXIDE SURFACE, AND METHOD OF SELECTIVELY FORMING NITRIDE FILM ON NITRIDE SURFACE WITH MIXTURE OF NITRIDE SURFACE AND OXIDE SURFACE

To provide an inhibitor of nitride film formation on an oxide surface.SOLUTION: An inhibitor of nitride film formation is adsorbed on an oxide surface to be used to inhibit nitride film formation on the oxide surface, the inhibitor having a structure shown in the following formula [Chemical formula 1]. M represents one selected from silicon and the like, R1 and R2 each represent one of hydrogen, an alkyl group, an aryl group and an alkylsilyl group, R1 and R2 each may be a cyclic group, R3, R4 and R5 each represent one of hydrogen, an alkyl group, an aryl group and an alkylsilyl group, and two or more of R3, R4 and R5 may be a cyclic group.SELECTED DRAWING: None 【課題】酸化物表面への窒化膜形成の阻害剤を提供する。【解決手段】窒化膜形成の阻害剤は、酸化物表面に吸着させることで、その後、酸化物表面への窒化膜形成を阻害するための、以下の式［化１］に示す構造を有する。［化１］TIFF2024027734000014.tif47161Ｍが、シリコン等から選択される１つで、Ｒ１及びＲ２が、水素、アルキル基、アリール基、及びアルキルシリル基の１つであり、Ｒ１とＲ２が環状基でもよく、Ｒ３、Ｒ４及びＲ５が、水素、アルキル基、アリール基、及びアルキルシリル基の１つであり、Ｒ３、Ｒ４及びＲ５のうち２つ以上が環状基になっていてもよい。【選択図】なし