INFRARED SENSOR MANUFACTURING METHOD AND INFRARED SENSOR
To provide a method for manufacturing an infrared sensor that can simplify a manufacturing process.SOLUTION: An infrared sensor comprising an umbrella-shaped infrared absorbing section, a temperature detecting section formed on a substrate and connected to the infrared absorbing section, and a contr...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng ; jpn |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | To provide a method for manufacturing an infrared sensor that can simplify a manufacturing process.SOLUTION: An infrared sensor comprising an umbrella-shaped infrared absorbing section, a temperature detecting section formed on a substrate and connected to the infrared absorbing section, and a control section formed on the substrate and processing a signal related to temperature of the temperature detecting section, is manufactured by a method including detecting section forming step S10 in which the temperature detecting section is formed, sacrificial layer forming step S20 in which a sacrificial layer is formed from a metal material, wiring forming step S30 in which a sacrificial layer is molded to form a wiring layer for the control section, and infrared absorbing section forming step S40 in which the infrared absorbing section is formed on the sacrificial layer.SELECTED DRAWING: Figure 4
【課題】製造工程を簡略化できる赤外線センサの製造方法を提供する。【解決手段】傘状の赤外線吸収部と、基板上に形成され、赤外線吸収部に接続された温度検出部と、基板上に形成され、温度検出部の温度に関する信号を処理する制御部と、を備える赤外線センサの製造方法であって、温度検出部を形成する検出部形成工程S10と、犠牲層を金属材料により成膜する犠牲層成膜工程S20と、犠牲層を成形して制御部の配線層を形成する配線形成工程S30と、犠牲層上に赤外線吸収部を形成する赤外線吸収部形成工程S40と、を備える。【選択図】図4 |
---|