ETCHING METHOD AND SUBSTRATE-PROCESSING DEVICE

To provide an etching method and a substrate-processing device, which can hold down a residue and enable achievement of both of a resist film's selection ratio and form.SOLUTION: An etching method hereof is arranged to be executed in a plasma-processing device having a plasma-processing chamber, a substrate-supporting unit having a lower electrode and supporting a substrate, an upper electrode disposed above the substrate-supporting unit, an RF power source connected to the upper or lower electrode, a DC power source connected to the upper electrode, and a gas-supplying unit for supplying a gas into the plasma-processing chamber. The etching method comprises the steps of preparing a substrate on the substrate-supporting unit, provided that an organic film 220 formed on the underlying layer 210 and a photoresist film 240 having a silicon-containing film 230 formed on the organic film, and having a pattern of openings 231, 232 are formed on the substrate; supplying a hydrogen gas with a fluorine-containing gas added thereto and a nitrogen gas; supplying the upper electrode with a DC signal; and supplying an RF signal to the lower electrode or the upper electrode to generate plasma and etch the organic film.SELECTED DRAWING: Figure 2 【課題】残渣を抑制し、レジスト膜の選択比と形状を両立するエッチング方法及び基板処理装置を提供する。【解決手段】プラズマ処理チャンバと、下部電極を有し基板を支持する基板支持部と、基板支持部の上方に配置される上部電極と、上部電極又は下部電極に結合されるＲＦ電源と、上部電極に結合されるＤＣ電源と、プラズマ処理チャンバ内にガスを供給するガス供給部と、を備えるプラズマ処理装置において実行するエッチング方法であって、下地層２１０の上に形成された有機膜２２０と、有機膜の上に形成された開口２３１、２３２のパターンを有するシリコン含有膜２３０を有するフォトレジスト膜２４０とが形成された基板を基板支持部に準備する工程と、フッ素含有ガスを添加した水素ガス及び窒素ガスを供給する工程と、上部電極にＤＣ信号を供給する工程と、下部電極又は上部電極にＲＦ信号を供給してプラズマを生成し有機膜をエッチングする工程と、を含む。【選択図】図２