CONNECTION STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING CONNECTION STRUCTURE

To provide a connection structure and a semiconductor device capable of suppressing adjacent connection terminals from being short-circuited.SOLUTION: A semiconductor device 10 has: a first connection terminal 30; a second connection terminal 50 opposed to the first connection terminal 30; and a jun...

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1. Verfasser: AIZAWA MITSUHIRO
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a connection structure and a semiconductor device capable of suppressing adjacent connection terminals from being short-circuited.SOLUTION: A semiconductor device 10 has: a first connection terminal 30; a second connection terminal 50 opposed to the first connection terminal 30; and a junction member 60 for bonding between the first connection terminal 30 and the second connection terminal 50. The junction member 60 has an intermetallic compound layer 70 formed by: a roughening copper metal film 80 that has such a structure that deposits 81 formed of a metal are superimposed in a mutually intersecting manner, and has many voids therein; and a solder layer entering into the voids of the roughening copper metal film 80.SELECTED DRAWING: Figure 2 【課題】隣接する接続端子同士のショートを抑制できる接続構造体及び半導体装置を提供する。【解決手段】半導体装置10は、第1接続端子30と、第1接続端子30と対向する第2接続端子50と、第1接続端子30と第2接続端子50とを接合する接合部材60とを有する。接合部材60は、金属からなる析出物81が交錯して重なり合う構造を有するとともに内部に多数の空隙を有する粗面化銅金属膜80と、粗面化銅金属膜80の空隙に入り込んだはんだ層とにより形成された金属間化合物層70を有する。【選択図】図2