SALT, ACID GENERATOR, RESIST COMPOSITION, AND METHOD FOR PRODUCING RESIST PATTERN

To provide a salt and the like which allow a resist pattern having good CD uniformity to be produced, and a resist composition containing the same.SOLUTION: There are provided a salt represented by formula (I), an acid generator, and a resist composition. [X represents S or I; R1-R3 each represent -...

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Hauptverfasser: ICHIKAWA KOJI, KOMURO KATSUHIRO, KATO SAKI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a salt and the like which allow a resist pattern having good CD uniformity to be produced, and a resist composition containing the same.SOLUTION: There are provided a salt represented by formula (I), an acid generator, and a resist composition. [X represents S or I; R1-R3 each represent -L3-CRf1Rf2-O-R10; Rf1 and Rf2 each represent a fluorine atom or a fluorinated alkyl group; R10 represents a hydrogen atom or an acid-labile group; R4-R9 each represent a halogen atom, a haloalkyl group, -L3-CRf1Rf2-O-R10 or the like; A1-A3 each represent an optionally substituted hydrocarbon group; Ar1-Ar3 each represent an aromatic hydrocarbon group or a heterocyclic aromatic hydrocarbon group; and at least one of m1-m3 represents an integer of 1 or more.]SELECTED DRAWING: None 【課題】良好なCD均一性を有するレジストパターンを製造することができる塩等及びこれを含むレジスト組成物を提供することを目的とする。【解決手段】式(I)で表される塩、酸発生剤及びレジスト組成物。TIFF2024009780000200.tif47138[XはS又はI;R1-R3は其々-L3-CRf1Rf2-O-R10;Rf1及びRf2はフッ素原子又はフッ素化アルキル基;R10は水素原子又は酸不安定基;R4-R9は、其々ハロゲン原子、ハロアルキル基又は-L3-CRf1Rf2-O-R10等;A1-A3は其々置換基を有していてもよい炭化水素基;Ar1-Ar3は其々芳香族炭化水素基又は複素環式芳香族炭化水素基;m1-m3の1以上は1以上の整数である。]【選択図】なし