FILM-FORMING METHOD AND FILM-FORMING DEVICE

To provide a technique that can appropriately control the amount of doping of a desired metal when manufacturing a silicon nitride film.SOLUTION: A film-forming method is forming a silicon nitride film doped with a desired metal on a substrate. This film-formation method includes a step (a) of suppl...

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Hauptverfasser:	WATANABE YOSUKE, SENDA SHOTA, SUZUKI KEISUKE
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a technique that can appropriately control the amount of doping of a desired metal when manufacturing a silicon nitride film.SOLUTION: A film-forming method is forming a silicon nitride film doped with a desired metal on a substrate. This film-formation method includes a step (a) of supplying a silicon-containing gas into a processing container in which the substrate is housed, a step of (b) supplying a metal-containing gas containing the desired metal into the processing container, and a step (c) of supplying a nitrogen-containing gas into the processing container after carrying out the step (a) at least once and carrying out the step (b) at least once.SELECTED DRAWING: Figure 4 【課題】窒化シリコン膜の製造時に所望の金属のドープ量を適切に制御することができる技術を提供する。【解決手段】成膜方法は、所望の金属をドープした窒化シリコン膜を基板に成膜する。こおｎ成膜方法は、（ａ）前記基板が収容された処理容器の内部にシリコン含有ガスを供給する工程と、（ｂ）前記処理容器の内部に前記所望の金属を含む金属含有ガスを供給する工程と、（ｃ）前記（ａ）の工程を少なくとも１回行うと共に、前記（ｂ）の工程を少なくとも１回行った後に、前記処理容器の内部に窒素含有ガスを供給する工程と、を有する。【選択図】図４