FILM DEPOSITION DEVICE, FILM DEPOSITION METHOD, AND MANUFACTURING METHOD FOR ELECTRONIC DEVICE

To suppress the enlargement of a device.SOLUTION: A film deposition method has a first deposition step for forming a first film composed of an organic material on a substrate using a mask and a second deposition step for forming a second film composed of an inorganic material on the substrate using...

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Bibliographische Detailangaben
Hauptverfasser:	MATSUMOTO YUKIO, HAMANO AKIHIRO, SUGAWARA YUKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To suppress the enlargement of a device.SOLUTION: A film deposition method has a first deposition step for forming a first film composed of an organic material on a substrate using a mask and a second deposition step for forming a second film composed of an inorganic material on the substrate using the mask common to the first deposition step.SELECTED DRAWING: Figure 2 【課題】装置の大型化を抑制すること。【解決手段】実施形態成膜方法は、マスクを用いて基板に有機材料で構成された第１の膜を形成する第１成膜工程と、前記第１成膜工程と共通の前記マスクを用いて、前記基板に無機材料で構成された第２の膜を形成する第２成膜工程と、を有する。【選択図】図２