METHOD OF REUSING SAM SUBSTRATE

To provide a SAM reusing method that can obtain similar results to a fresh substrate more efficiently than conventionally done.SOLUTION: A method of reusing a SAM substrate includes growing a layer made of a Ga compound on a ScAlMgO4 (hereafter referred to as [SAM]) substrate by vapor phase depositi...

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Hauptverfasser:	ANDO HIROTAKA, HOSHIO SHINICHI, TAKAHASHI KAZUYA, KUMAGAI TAKESHI, NAMBU TOKI, SHIRAISHI YUJI, TADATOMO KAZUYUKI, FUJII TAKASHI, INOMOTO RYO, FUKUDA TSUGUO, SAITO KENJI, ARAKI TSUTOMU
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	To provide a SAM reusing method that can obtain similar results to a fresh substrate more efficiently than conventionally done.SOLUTION: A method of reusing a SAM substrate includes growing a layer made of a Ga compound on a ScAlMgO4 (hereafter referred to as [SAM]) substrate by vapor phase deposition, separating the layer made of the Ga compound and the SAM substrate when returned to room temperature, and re-machining the separated SAM substrate, thereby enabling growth of a new layer on the SAM substrate.SELECTED DRAWING: Figure 1 【課題】フレッシュな基板と同様の結果が従来より効率よくかつ得られるＳＡＭ再利用方法を提供すること。【解決手段】ＳｃＡｌＭｇＯ４（以下「ＳＡＭ」と記す。）基板上に、Ｇａ化合物からなる層を気相成長させ、室温に戻したときに、前記Ｇａ化合物からなる層とＳＡＭ基板とを分離し、分離したＳＡＭ基板を再加工することで、該ＳＡＭ基板上に新たな層の成長を可能にするＳＡＭ基板の再利用方法。【選択図】図１