SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
To determine the quality of heater control based on a set temperature for each of a plurality of zones for controlling the temperatures of a plurality of substrates.SOLUTION: Provided is a substrate processing device that includes: a processing container where a plurality of substrates are processed...
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| creator | OUCHI MIKI SON SUNG DUK KIKUCHI YASUAKI HIROTA NOBUYUKI HISHIYA SHINGO YAMAGUCHI TATSUYA |
| description | To determine the quality of heater control based on a set temperature for each of a plurality of zones for controlling the temperatures of a plurality of substrates.SOLUTION: Provided is a substrate processing device that includes: a processing container where a plurality of substrates are processed; a plurality of heaters controlling, for each of a plurality of zones, the temperatures of the plurality of substrates accommodated inside the processing container; and a control unit controlling the operation of the plurality of heaters. The control unit controls the plurality of heaters to a preset set temperature for each of the plurality of zones to process the plurality of accommodated substrates, determines whether abnormality determination conditions are satisfied, the abnormality determination conditions including that an output value of at least one of the plurality heaters is equal to or less than a heater control resolution, and based on the results of the determination, controls to issue a warning for the set temperature for each of the plurality of zones.SELECTED DRAWING: Figure 4
【課題】複数の基板を温調するための複数のゾーン毎の設定温度によるヒータ制御の良否を判定する。【解決手段】複数の基板の処理が行われる処理容器と、前記処理容器の内部に収容された前記複数の基板を、複数のゾーン毎に温調する複数のヒータと、前記複数のヒータの動作を制御する制御装置と、を備える基板処理装置であって、前記制御装置は、予め設定された前記複数のゾーン毎の設定温度に前記複数のヒータを制御し、収容された前記複数の基板の処理を行い、前記複数のヒータの少なくともいずれかの出力値がヒータの制御分解能以下であることを含む異常判定条件を満たすか否かの判定を行い、前記判定の結果に基づき、前記複数のゾーン毎の設定温度に対する警告を行うように制御する基板処理装置が提供される。【選択図】図４ |
| format | Patent |
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【課題】複数の基板を温調するための複数のゾーン毎の設定温度によるヒータ制御の良否を判定する。【解決手段】複数の基板の処理が行われる処理容器と、前記処理容器の内部に収容された前記複数の基板を、複数のゾーン毎に温調する複数のヒータと、前記複数のヒータの動作を制御する制御装置と、を備える基板処理装置であって、前記制御装置は、予め設定された前記複数のゾーン毎の設定温度に前記複数のヒータを制御し、収容された前記複数の基板の処理を行い、前記複数のヒータの少なくともいずれかの出力値がヒータの制御分解能以下であることを含む異常判定条件を満たすか否かの判定を行い、前記判定の結果に基づき、前記複数のゾーン毎の設定温度に対する警告を行うように制御する基板処理装置が提供される。【選択図】図４</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240111&DB=EPODOC&CC=JP&NR=2024002316A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240111&DB=EPODOC&CC=JP&NR=2024002316A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OUCHI MIKI</creatorcontrib><creatorcontrib>SON SUNG DUK</creatorcontrib><creatorcontrib>KIKUCHI YASUAKI</creatorcontrib><creatorcontrib>HIROTA NOBUYUKI</creatorcontrib><creatorcontrib>HISHIYA SHINGO</creatorcontrib><creatorcontrib>YAMAGUCHI TATSUYA</creatorcontrib><title>SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD</title><description>To determine the quality of heater control based on a set temperature for each of a plurality of zones for controlling the temperatures of a plurality of substrates.SOLUTION: Provided is a substrate processing device that includes: a processing container where a plurality of substrates are processed; a plurality of heaters controlling, for each of a plurality of zones, the temperatures of the plurality of substrates accommodated inside the processing container; and a control unit controlling the operation of the plurality of heaters. The control unit controls the plurality of heaters to a preset set temperature for each of the plurality of zones to process the plurality of accommodated substrates, determines whether abnormality determination conditions are satisfied, the abnormality determination conditions including that an output value of at least one of the plurality heaters is equal to or less than a heater control resolution, and based on the results of the determination, controls to issue a warning for the set temperature for each of the plurality of zones.SELECTED DRAWING: Figure 4
【課題】複数の基板を温調するための複数のゾーン毎の設定温度によるヒータ制御の良否を判定する。【解決手段】複数の基板の処理が行われる処理容器と、前記処理容器の内部に収容された前記複数の基板を、複数のゾーン毎に温調する複数のヒータと、前記複数のヒータの動作を制御する制御装置と、を備える基板処理装置であって、前記制御装置は、予め設定された前記複数のゾーン毎の設定温度に前記複数のヒータを制御し、収容された前記複数の基板の処理を行い、前記複数のヒータの少なくともいずれかの出力値がヒータの制御分解能以下であることを含む異常判定条件を満たすか否かの判定を行い、前記判定の結果に基づき、前記複数のゾーン毎の設定温度に対する警告を行うように制御する基板処理装置が提供される。【選択図】図４</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAODnUKDglyDHFVCAjyd3YNDvb0c1dwcQ3zdHZVcPRzUcAq7-sa4uHvwsPAmpaYU5zKC6W5GZTcXEOcPXRTC_LjU4sLEpNT81JL4r0CjAyMTAwMjIwNzRyNiVIEAFYtKfY</recordid><startdate>20240111</startdate><enddate>20240111</enddate><creator>OUCHI MIKI</creator><creator>SON SUNG DUK</creator><creator>KIKUCHI YASUAKI</creator><creator>HIROTA NOBUYUKI</creator><creator>HISHIYA SHINGO</creator><creator>YAMAGUCHI TATSUYA</creator><scope>EVB</scope></search><sort><creationdate>20240111</creationdate><title>SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD</title><author>OUCHI MIKI ; SON SUNG DUK ; KIKUCHI YASUAKI ; HIROTA NOBUYUKI ; HISHIYA SHINGO ; YAMAGUCHI TATSUYA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2024002316A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>OUCHI MIKI</creatorcontrib><creatorcontrib>SON SUNG DUK</creatorcontrib><creatorcontrib>KIKUCHI YASUAKI</creatorcontrib><creatorcontrib>HIROTA NOBUYUKI</creatorcontrib><creatorcontrib>HISHIYA SHINGO</creatorcontrib><creatorcontrib>YAMAGUCHI TATSUYA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OUCHI MIKI</au><au>SON SUNG DUK</au><au>KIKUCHI YASUAKI</au><au>HIROTA NOBUYUKI</au><au>HISHIYA SHINGO</au><au>YAMAGUCHI TATSUYA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD</title><date>2024-01-11</date><risdate>2024</risdate><abstract>To determine the quality of heater control based on a set temperature for each of a plurality of zones for controlling the temperatures of a plurality of substrates.SOLUTION: Provided is a substrate processing device that includes: a processing container where a plurality of substrates are processed; a plurality of heaters controlling, for each of a plurality of zones, the temperatures of the plurality of substrates accommodated inside the processing container; and a control unit controlling the operation of the plurality of heaters. The control unit controls the plurality of heaters to a preset set temperature for each of the plurality of zones to process the plurality of accommodated substrates, determines whether abnormality determination conditions are satisfied, the abnormality determination conditions including that an output value of at least one of the plurality heaters is equal to or less than a heater control resolution, and based on the results of the determination, controls to issue a warning for the set temperature for each of the plurality of zones.SELECTED DRAWING: Figure 4
【課題】複数の基板を温調するための複数のゾーン毎の設定温度によるヒータ制御の良否を判定する。【解決手段】複数の基板の処理が行われる処理容器と、前記処理容器の内部に収容された前記複数の基板を、複数のゾーン毎に温調する複数のヒータと、前記複数のヒータの動作を制御する制御装置と、を備える基板処理装置であって、前記制御装置は、予め設定された前記複数のゾーン毎の設定温度に前記複数のヒータを制御し、収容された前記複数の基板の処理を行い、前記複数のヒータの少なくともいずれかの出力値がヒータの制御分解能以下であることを含む異常判定条件を満たすか否かの判定を行い、前記判定の結果に基づき、前記複数のゾーン毎の設定温度に対する警告を行うように制御する基板処理装置が提供される。【選択図】図４</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD |
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