SEMICONDUCTOR STORAGE DEVICE
To provide a semiconductor storage device capable of suppressing a bad connection between structures arranged in different hierarchies.SOLUTION: A semiconductor storage device 1 of an embodiment comprises a first stair part SP which is arranged in a position overlapping a plate-like part LI in a lam...
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Zusammenfassung: | To provide a semiconductor storage device capable of suppressing a bad connection between structures arranged in different hierarchies.SOLUTION: A semiconductor storage device 1 of an embodiment comprises a first stair part SP which is arranged in a position overlapping a plate-like part LI in a lamination direction in a stair region Sr and in which a plurality of conductive layers WL are processed stepwise along a first direction, and second and third stair parts each of which is arranged on both sides in a second direction of the plate-like part LI in the stair region SR and includes a structure reversed in the second direction with respect to the plate-like part LI and in which the plurality of conductive layers WL are processed stepwise. Each of a plurality of first plugs CH is positioned in a different position in the second direction with respect to the plate-like part LI according to a position in the first direction. Each of a plurality of second plugs CH is arranged in a position in which arrangement of each of the plurality of first plugs CH is reversed in the second direction with respect to the plate-like part LI.SELECTED DRAWING: Figure 3
【課題】異なる階層に配置される構造間の接続不良を抑制すること。【解決手段】実施形態の半導体記憶装置1は、階段領域SR内における積層方向に板状部LIと重なる位置に配置され、複数の導電層WLが第1の方向に沿って階段状に加工された第1の階段部SPと、階段領域SR内における板状部LIの第2の方向の両側にそれぞれ配置され、複数の導電層WLが階段状に加工された構造であって、板状部LIに対して互いを第2の方向に反転させた構造を有する第2及び第3の階段部と、を備え、複数の第1のプラグCHは、第1の方向の位置に応じて、板状部LIに対して第2の方向の異なる位置にそれぞれ配置され、複数の第2のプラグCHは、複数の第1のプラグCHのそれぞれの配置を板状部LIに対して第2の方向に反転させた位置にそれぞれ配置される。【選択図】図3 |
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