TITANIUM COMPLEX, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING TITANIUM-CONTAINING THIN FILM

To provide a titanium complex useful for producing a titanium-containing thin film under low-temperature deposition conditions without using an oxidative gas.SOLUTION: The titanium complex is represented by general formula (1) (where each of R1 and R2 independently represents a C1-6 alkyl group whic...

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Hauptverfasser: OIKE HIROYUKI, YAMAMOTO ARINORI, IKEMURA SHUYA, HAYAKAWA TEPPEI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a titanium complex useful for producing a titanium-containing thin film under low-temperature deposition conditions without using an oxidative gas.SOLUTION: The titanium complex is represented by general formula (1) (where each of R1 and R2 independently represents a C1-6 alkyl group which may be bonded to each other to form a ring; X represents CR3 or a N atom; Y represents CR4 or a N atom; Z represents CR5 or a N atom; each of R3, R4 and R5 independently represents a hydrogen atom or a C1-6 alkyl group; and n represents an integer from 1 to 3).SELECTED DRAWING: Figure 1 【課題】酸化性ガスを用いない低温成膜条件下で、チタン含有薄膜を製造するのに有用なチタン錯体を提供する。【解決手段】一般式(1)JPEG2024001133000032.jpg33139(式中、R1及びR2は各々独立に炭素数1~6のアルキル基を表し、互いに結合して環を形成していてもよい。XはCR3又はN原子を表す。YはCR4又はN原子を表す。ZはCR5又はN原子を表す。R3、R4及びR5は各々独立に水素原子又は炭素数1~6のアルキル基を表す。nは1~3の整数を表す。)で示されるチタン錯体。【選択図】図1