SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE

To provide a semiconductor device and a semiconductor memory device, capable of improving a mobility of a carrier while stably controlling an amount of an oxygen deficiency.SOLUTION: A semiconductor device comprises: a first electrode 50; a second electrode 32; a metal oxide semiconductor 41 that is contacted to each of the first electrode 50 and the second electrode 32; a gate electrode 42; and an insulation film 43 that is provided between at least a part of the metal oxide semiconductor 41 and the gate electrode 42. The metal oxide semiconductor 41 contains indium, zinc, and niobium as a metal element.SELECTED DRAWING: Figure 2 【課題】酸素欠損の量を安定に制御し、かつ、キャリアの移動度を良好にすることが可能な半導体装置及び半導体記憶装置を提供する。【解決手段】半導体装置は、第１電極５０と、第２電極３２と、第１電極５０及び第２電極３２とそれぞれ接する金属酸化物半導体４１と、ゲート電極４２と、金属酸化物半導体４１の少なくとも一部とゲート電極４２との間に設けられる絶縁膜４３と、を備え、金属酸化物半導体４１は、金属元素として、インジウムと、亜鉛と、ニオブと、を含む。【選択図】図２