SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

To provide a semiconductor device whose electrical characteristics can be improved.SOLUTION: A semiconductor device includes a wiring layer, a first laminate stacked on the wiring layer, a second laminate stacked on the first laminate, and a first resin body covering at least a part of the periphery of the first laminate. When the direction in which the first laminate and the second laminate are stacked is taken as a stacking direction, the first laminate has a first pad connected to the wiring layer, a first device layer electrically connected to the first pad, and a first electrode electrically connected to the first device layer. The second laminate has a second pad electrically connected to the first electrode, and a second device layer electrically connected to the second pad. In the stacking direction, the first resin body is located closer to the wiring layer side than the interface between the first laminate and the second laminate.SELECTED DRAWING: Figure 2 【課題】電気的特性の向上を図ることができる半導体装置を提供することである。【解決手段】実施形態の半導体装置は、配線層と、前記配線層に積層された第１積層体と、前記第１積層体に積層された第２積層体と、前記第１積層体の周囲の少なくとも一部を覆う第１樹脂体と、を持つ。前記第１積層体と、前記第２積層体と、が積層された方向を積層方向としたとき、前記第１積層体は、前記配線層に接続された第１パッドと、前記第１パッドと電気的に接続された第１デバイス層と、前記第１デバイス層と電気的に接続した第１電極と、を持つ。前記第２積層体は、前記第１電極に電気的に接続された第２パッドと、前記第２パッドと電気的に接続された第２デバイス層と、を持つ。前記積層方向において、前記第１樹脂体が、前記第１積層体と前記第２積層体との界面よりも前記配線層側にある。【選択図】図２