SEMICONDUCTOR STORAGE DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE
To provide a semiconductor storage device having high performance.SOLUTION: A semiconductor storage device 10 includes a tunnel insulation film 53, a charge capture film 54 deposed on the tunnel insulation film 53, and a conductor layer 40 deposed on the charge capture film 54 through block insulati...
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| creator | ARIGA TOMOTAKA KITAYAMA DAIKI IKENO DAISUKE KAJITA AKIHIRO IKEDA MITSUO |
| description | To provide a semiconductor storage device having high performance.SOLUTION: A semiconductor storage device 10 includes a tunnel insulation film 53, a charge capture film 54 deposed on the tunnel insulation film 53, and a conductor layer 40 deposed on the charge capture film 54 through block insulation films 55, 56. The conductor layer 40 includes a first layer 41 containing molybdenum, and a second layer 42 being a layer deposed at a position opposite from the block insulation films 55, 56 across the first layer 41 and containing tungsten.SELECTED DRAWING: Figure 13
【課題】性能の高い半導体記憶装置を提供する。【解決手段】半導体記憶装置１０は、トンネル絶縁膜５３と、トンネル絶縁膜５３の上に設けられた電荷捕獲膜５４と、電荷捕獲膜５４の上にブロック絶縁膜５５，５６を介して設けられた導電体層４０と、を備える。導電体層４０は、モリブデンを含む第１層４１と、第１層４１を挟んでブロック絶縁膜５５，５６とは反対側となる位置に設けられた層であって、タングステンを含む第２層４２と、を含む。【選択図】図１３ |
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【課題】性能の高い半導体記憶装置を提供する。【解決手段】半導体記憶装置１０は、トンネル絶縁膜５３と、トンネル絶縁膜５３の上に設けられた電荷捕獲膜５４と、電荷捕獲膜５４の上にブロック絶縁膜５５，５６を介して設けられた導電体層４０と、を備える。導電体層４０は、モリブデンを含む第１層４１と、第１層４１を挟んでブロック絶縁膜５５，５６とは反対側となる位置に設けられた層であって、タングステンを含む第２層４２と、を含む。【選択図】図１３</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231227&DB=EPODOC&CC=JP&NR=2023183052A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231227&DB=EPODOC&CC=JP&NR=2023183052A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ARIGA TOMOTAKA</creatorcontrib><creatorcontrib>KITAYAMA DAIKI</creatorcontrib><creatorcontrib>IKENO DAISUKE</creatorcontrib><creatorcontrib>KAJITA AKIHIRO</creatorcontrib><creatorcontrib>IKEDA MITSUO</creatorcontrib><title>SEMICONDUCTOR STORAGE DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE</title><description>To provide a semiconductor storage device having high performance.SOLUTION: A semiconductor storage device 10 includes a tunnel insulation film 53, a charge capture film 54 deposed on the tunnel insulation film 53, and a conductor layer 40 deposed on the charge capture film 54 through block insulation films 55, 56. The conductor layer 40 includes a first layer 41 containing molybdenum, and a second layer 42 being a layer deposed at a position opposite from the block insulation films 55, 56 across the first layer 41 and containing tungsten.SELECTED DRAWING: Figure 13
【課題】性能の高い半導体記憶装置を提供する。【解決手段】半導体記憶装置１０は、トンネル絶縁膜５３と、トンネル絶縁膜５３の上に設けられた電荷捕獲膜５４と、電荷捕獲膜５４の上にブロック絶縁膜５５，５６を介して設けられた導電体層４０と、を備える。導電体層４０は、モリブデンを含む第１層４１と、第１層４１を挟んでブロック絶縁膜５５，５６とは反対側となる位置に設けられた層であって、タングステンを含む第２層４２と、を含む。【選択図】図１３</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgPdvX1dPb3cwl1DvEPUggGEo7urgourmGezq46Co5-Lgq-riEe_i4KbkBpX0e_UDdH55DQIE8_dwV8WnkYWNMSc4pTeaE0N4OSm2uIs4duakF-fGpxQWJyal5qSbxXgJGBkbGhhbGBqZGjMVGKADgaMYk</recordid><startdate>20231227</startdate><enddate>20231227</enddate><creator>ARIGA TOMOTAKA</creator><creator>KITAYAMA DAIKI</creator><creator>IKENO DAISUKE</creator><creator>KAJITA AKIHIRO</creator><creator>IKEDA MITSUO</creator><scope>EVB</scope></search><sort><creationdate>20231227</creationdate><title>SEMICONDUCTOR STORAGE DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE</title><author>ARIGA TOMOTAKA ; KITAYAMA DAIKI ; IKENO DAISUKE ; KAJITA AKIHIRO ; IKEDA MITSUO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023183052A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ARIGA TOMOTAKA</creatorcontrib><creatorcontrib>KITAYAMA DAIKI</creatorcontrib><creatorcontrib>IKENO DAISUKE</creatorcontrib><creatorcontrib>KAJITA AKIHIRO</creatorcontrib><creatorcontrib>IKEDA MITSUO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ARIGA TOMOTAKA</au><au>KITAYAMA DAIKI</au><au>IKENO DAISUKE</au><au>KAJITA AKIHIRO</au><au>IKEDA MITSUO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR STORAGE DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE</title><date>2023-12-27</date><risdate>2023</risdate><abstract>To provide a semiconductor storage device having high performance.SOLUTION: A semiconductor storage device 10 includes a tunnel insulation film 53, a charge capture film 54 deposed on the tunnel insulation film 53, and a conductor layer 40 deposed on the charge capture film 54 through block insulation films 55, 56. The conductor layer 40 includes a first layer 41 containing molybdenum, and a second layer 42 being a layer deposed at a position opposite from the block insulation films 55, 56 across the first layer 41 and containing tungsten.SELECTED DRAWING: Figure 13
【課題】性能の高い半導体記憶装置を提供する。【解決手段】半導体記憶装置１０は、トンネル絶縁膜５３と、トンネル絶縁膜５３の上に設けられた電荷捕獲膜５４と、電荷捕獲膜５４の上にブロック絶縁膜５５，５６を介して設けられた導電体層４０と、を備える。導電体層４０は、モリブデンを含む第１層４１と、第１層４１を挟んでブロック絶縁膜５５，５６とは反対側となる位置に設けられた層であって、タングステンを含む第２層４２と、を含む。【選択図】図１３</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR STORAGE DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE |
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