SEMICONDUCTOR STORAGE DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE

To provide a semiconductor storage device having high performance.SOLUTION: A semiconductor storage device 10 includes a tunnel insulation film 53, a charge capture film 54 deposed on the tunnel insulation film 53, and a conductor layer 40 deposed on the charge capture film 54 through block insulation films 55, 56. The conductor layer 40 includes a first layer 41 containing molybdenum, and a second layer 42 being a layer deposed at a position opposite from the block insulation films 55, 56 across the first layer 41 and containing tungsten.SELECTED DRAWING: Figure 13 【課題】性能の高い半導体記憶装置を提供する。【解決手段】半導体記憶装置１０は、トンネル絶縁膜５３と、トンネル絶縁膜５３の上に設けられた電荷捕獲膜５４と、電荷捕獲膜５４の上にブロック絶縁膜５５，５６を介して設けられた導電体層４０と、を備える。導電体層４０は、モリブデンを含む第１層４１と、第１層４１を挟んでブロック絶縁膜５５，５６とは反対側となる位置に設けられた層であって、タングステンを含む第２層４２と、を含む。【選択図】図１３