IGBT AND DRIVING METHOD THEREOF

To provide an IGBT in which both on-resistance and switching loss can be reduced, and driving method thereof.SOLUTION: An IGBT comprises: a semiconductor portion having a first surface and a second surface located on the opposite side of the first surface; a first electrode provided on the first sur...

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Bibliographische Detailangaben
Hauptverfasser:	SUWA TAKASHI, MATSUDAI TOMOKO, IWAKAJI YOKO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	To provide an IGBT in which both on-resistance and switching loss can be reduced, and driving method thereof.SOLUTION: An IGBT comprises: a semiconductor portion having a first surface and a second surface located on the opposite side of the first surface; a first electrode provided on the first surface; a second electrode provided on the second surface; a first control electrode provided within the semiconductor portion and insulated from the semiconductor portion; a second control electrode provided within the semiconductor portion and insulated from the semiconductor portion; and a third control electrode provided within the semiconductor portion and insulated from the semiconductor portion.SELECTED DRAWING: Figure 1 【課題】オン抵抗およびスイッチング損失の双方を低減できるＩＧＢＴ及びその駆動方法を提供する。【解決手段】ＩＧＢＴは、第１面及び前記第１面の反対側に位置する第２面を有する半導体部と、前記第１面上に設けられた第１電極と、前記第２面上に設けられた第２電極と、前記半導体部内に設けられ、前記半導体部から絶縁された第１制御電極と、前記半導体部内に設けられ、前記半導体部から絶縁された第２制御電極と、前記半導体部内に設けられ、前記半導体部から絶縁された第３制御電極と、を備える。【選択図】図１