SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
To provide a semiconductor device and a method for manufacturing the same which is less prone to wire bonding defects.SOLUTION: An insulating layer OI includes an aperture OP1 that exposes the surface of a conductive layer CL1 and an aperture OP2 that exposes the surface of a conductive layer CL2 an...
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| Format: | Patent |
| Sprache: | eng ; jpn |
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| Zusammenfassung: | To provide a semiconductor device and a method for manufacturing the same which is less prone to wire bonding defects.SOLUTION: An insulating layer OI includes an aperture OP1 that exposes the surface of a conductive layer CL1 and an aperture OP2 that exposes the surface of a conductive layer CL2 and has a smaller aperture area than the aperture OP1. The material of the surface of the conductive layer CL2 exposed through the aperture OP2 is a material different from that of the surface of the conductive layer CL1 exposed through the aperture OP1 and contains aluminum.SELECTED DRAWING: Figure 3
【課題】ワイヤボンディング不良が生じにくい半導体装置およびその製造方法を提供する。【解決手段】絶縁層ＯＩは、導電層ＣＬ１の表面を露出する開口ＯＰ１と、導電層ＣＬ２の表面を露出し開口ＯＰ１よりも小さい開口面積を有する開口ＯＰ２とを有する。開口ＯＰ２から露出する導電層ＣＬ２の表面の材質は、開口ＯＰ１から露出する導電層ＣＬ１の表面の材質とは異なる材質であり、かつアルミニウムを含む材質である。【選択図】図３ |
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